STP55NF06 - N Channel MOSFET

Specifications

• Type of Control Channel: N -Channel

• Maximum Power Dissipation (Pd): 110 W

• Maximum Drain-Source Voltage |Vds|: 60 V

• Maximum Gate-Source Voltage |Vgs|: 20 V

• Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

• Maximum Drain Current |Id|: 50 A

• Maximum Junction Temperature (Tj): 175 °C

• Total Gate Charge (Qg): 44.5 nC

• Turn-off delay time 36nSec

• Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm

Package Contents

1×STP55NF06 N Channel MOSFET IC