IRF540 N-Channel MOSFET

Specifications

• Small signal N-Channel MOSFET

• Continuous Drain Current (ID) is 33A at 25°C

• Pulsed Drain Current (ID-peak) is 110A

• Minimum Gate threshold voltage (VGS-th) is 2V

• Maximum Gate threshold voltage (VGS-th) is 4V

• Gate-Source Voltage is (VGS) is ±20V

• Maximum Drain-Source Voltage (VDS) is 100V

• Available in TO220 package

Package Content

1× IRF540 N Channel MOSFET